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| PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL 1mA Mounting torque Terminal connection torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C IXFN40N110P VDSS ID25 RDS(on) trr = = 1100V 34A 260m 300ns Maximum Ratings 1100 1100 30 40 34 100 20 2 20 890 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Fast recovery diode * Unclamped Inductive Switching (UIS) t = 1min t = 1s rated * Low package inductance - easy to drive and to protect Advantages * Easy to mount * Space savings * High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 20A, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1100 3.5 6.5 300 V V nA Applications: High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters 50 A 3 mA 260 m (c) 2008 IXYS CORPORATION, All rights reserved DS99901A(03/08) IXFN40N110P Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 20A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 20A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 20A, Note 1 Gate input resistance Characteristic Values Min. Typ. Max. 20 32 1.65 19 1070 46 53 55 110 54 310 95 142 0.14 S nF pF pF ns ns ns ns nC nC nC C/W C/W SOT-227B Outline Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/s VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 40 160 1.5 A A V 300 ns 2.2 16 C A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN40N110P Fig. 1. Output Characteristics @ 25C 40 35 30 VGS = 10V 8V 90 80 70 7V VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes 25 20 15 10 5 0 0 1 2 3 4 5 6 ID - Amperes 60 50 7V 40 30 6V 20 10 0 7 8 9 0 5 10 15 6V 5V 20 25 30 5V VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C 40 35 30 VGS = 10V 7V 3.0 2.8 2.6 2.4 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 I D = 20A I D = 40A ID - Amperes 25 20 15 10 5 5V 0 0 2 4 6 8 10 12 14 16 18 20 22 6V 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current 2.8 2.6 2.4 VGS = 10V TJ = 125C 36 32 28 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 80 90 TJ = 25C 4 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes 24 20 16 12 8 ID - Amperes TC - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved IXFN40N110P Fig. 7. Input Admittance 55 50 45 40 55 50 45 40 25C TJ = - 40C Fig. 8. Transconductance g f s - Siemens ID - Amperes 35 30 25 20 15 10 5 0 3.5 4.0 4.5 5.0 TJ = 125C 25C - 40C 35 30 25 20 15 10 5 0 125C 5.5 6.0 6.5 7.0 7.5 0 5 10 15 20 25 30 35 40 45 50 55 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 110 100 90 12 10 8 6 4 2 10 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 0 50 100 16 14 VDS = 550V I D = 20A I G = 10mA Fig. 10. Gate Charge IS - Amperes 80 70 60 50 40 30 20 TJ = 125C TJ = 25C VGS - Volts 150 200 250 300 350 400 450 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 Fig. 12. Maximum Transient Thermal Impedance 1.000 f = 1 MHz Capacitance - PicoFarads 10,000 Ciss 1,000 Coss Z(th)JC - C / W 35 40 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 0.001 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_40N110P(97) 03-28-08-A |
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